Influence of carrier localization on modulation mechanism in photoreflectance of GaAsN and GaInAsN

Kudrawiec, R.; Sek, G.; Misiewics, J.; Li, L. H.; Harmand, J. C.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1379
Academic Journal
GaAs[sub 0.98]N[sub 0.02] and Ga[sub 0.95]In[sub 0.05]As[sub 0.98]N[sub 0.02] layers have been investigated by photoreflectance (PR) and photoluminescence in 10–300 K temperature range. A decrease in PR signal has been found when the temperature was lowered. This effect is attributed to a weakening of modulation efficiency, which is induced by carrier localization that has been evidenced in low temperature photoluminescence. The Kramers–Kronig analysis is proposed as a simple method to determine the evolution of transition intensity with temperature when the change in the PR line shape can take place. © 2003 American Institute of Physics.


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