TITLE

Gate-controllable spin battery

AUTHOR(S)
Wen Long; Qing-Feng Sun, F.; Hong Guo; Jian Wang
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1397
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We propose a gate-controllable spin-battery for spin current. The spin battery consists of a lateral double quantum dot under a uniform magnetic field. A finite dc spin current is driven out of the device by controlling a set of gate voltages. Spin current can also be delivered in the absence of charge current. The proposed device should be realizable using present technology at low temperature. © 2003 American Institute of Physics.
ACCESSION #
10543226

 

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