Slow trap response of zirconium dioxide thin films on silicon

Harasek, S.; Lugstein, A.; Wanzenboeck, H. D.; Bertagnolli, F.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1400
Academic Journal
In this work, we explore the electrical properties of a metal–oxide–semiconductor system that incorporates a high-k zirconia dielectric with an equivalent oxide thickness of 3 nm deposited by metalorganic chemical vapor deposition. In general, the thin films examined exhibit excellent electrical properties. However, dynamic I–V measurements unveil the presence of trapping sites with response times up to 3 s. By applying a recently proposed model, this slow trap response can be consistently explained by traps located at the inner interface of a two-layer dielectric consisting of the high-k material itself and a transition layer in contact with the semiconductor. Trap energies are found to be distributed around two distinct levels. © 2003 American Institute of Physics.


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