Arsenic penetration behavior and electrical characteristics of As-doped n[sup +] polycrystalline-silicon/high-k gate dielectric (HfO[sub 2] and Al[sub 2]O[sub 3]) films on Si (100) substrate

Lee, Chihoon; Choi, Jihoon; Cho, Moonju; Park, Jaehoo; Cheol Seong Hwang; Hyeong Joon Kim; Jae hack, Jaehoo; Jeong Wonshik Lee, Jaehoo
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1403
Academic Journal
Arsenic (As)-doped polycrystalline-silicon gate/HfO[sub 2], HfO[sub 2]–Al[sub 2]O[sub 3], or Al[sub 2]O[sub 3]–HfO[sub 2]–Al[sub 2]O[sub 3]/p-type Si (100) metal–oxide–semiconductor capacitors were fabricated using an atomic-layer-deposition technique to investigate the degree of As penetration and the electrical properties of various high-k gate dielectric stacks. The HfO[sub 2]–Al[sub 2]O[sub 3] stack film showed the highest resistance to As diffusion due to the presence of a rather thick amorphous interface layer. A flatband voltage shift of 100 mV, a leakage current density of -1.07×10[sup -9] A/cm[sup 2] at -1 V, a hysteresis voltage <60 mV and excellent reliability characteristics were obtained from this capacitor stack due to the lowest As penetration, less generation of the interface state density, and the lowest surface roughness. Thin Al[sub 2]O[sub 3] capping did not improve the As-diffusion barrier properties due to its island-like surface morphology. © 2003 American Institute of Physics.


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