SiC-capped nanotip arrays for field emission with ultralow turn-on field

Lo, H. C.; Das, D.; J. S. Hwang, D.; K. H. Chen, D.; C. H. Hsu, D.; C. F Chen, D.; L. C. Chen, D.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1420
Academic Journal
Silicon nanotips with tip diameter and height measuring 1 nm and 1 μm, respectively, and density in the range of 10[sup 9]–3×10[sup 11] cm[sup -2], were fabricated monolithically from silicon wafers by electron cyclotron resonance plasma etching technique at a temperature of 200 °C. Field emission current densities of 3.0 mA/cm[sup 2] at an applied field of ∼1.0 V/μm was obtained from these silicon nanotips. High-resolution transmission electron microscope and Auger electron spectroscopy analyses concluded that the nanotips are composed of monolithic silicon and nanometer-size SiC cap at the top. A 0.35 V/μm turn-on field to draw a 10 μA/cm[sup 2] current density was demonstrated, which is much lower than other reported materials. The excellent field emission property demonstrated by these nanotips, which were fabricated by a process integrable to the existing silicon device technology at low temperatures, is a step forward in achieving low-power field emission displays and vacuum electronic devices. © 2003 American Institute of Physics.


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