TITLE

Influence of a GaN interfacial layer between n[sup +]-GaN and active layer on the characteristics of blue light-emitting diodes

AUTHOR(S)
Kim, C. S.; Cho, H. K.; Hong, C.-H.; Lee, H. J.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1447
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Influence of a GaN interfacial layer with graded growth rate and modulated Si-doping between n[sup +]-GaN and InGaN/GaN multiquantum well on device performance of blue light-emitting diodes (LEDs) was investigated. It was found that the introduction of a GaN interfacial layer leads to an improvement of current–voltage characteristics and also an enhancement of output power compared to a conventional LED. These could result from the removal of spiral growth hillocks and smoothened morphology at the interface, as confirmed by atomic force microscopy measurements, which might cause the leakage current to decrease and the current injection into the active layer to enhance. © 2003 American Institute of Physics.
ACCESSION #
10543209

 

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