A resonant spin lifetime transistor

Cartoixe, X.; Ting, D. Z.-Y.; Chang, Y.-C.
August 2003
Applied Physics Letters;8/18/2003, Vol. 83 Issue 7, p1462
Academic Journal
We present a device concept for a spintronic transistor based on the spin relaxation properties a two-dimensional electron gas (2DEG). The device design is very similar to that of the Datta and Das spin transistor. However, our proposed device works in the diffusive regime rather than in the ballistic regime. This eases lithographical and processing requirements. The switching action is achieved through the biasing of a gate contact, which controls the lifetime of spins injected into the 2DEG from a ferromagnetic emitter, thus allowing the traveling spins to be either aligned with a ferromagnetic collector or randomizing them before collection. The device configuration can easily be turned into a memory and a readout head for magnetically stored information. © 2003 American Institute of Physics.


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