TITLE

Influence of geometry and passivation on noise in GalnP/GaAs heterojunction bipolar transistors

AUTHOR(S)
Delseny, C.; Mourier, Y.; Pascal, F.; Jarrix, S.; Lecoy, G.
PUB. DATE
September 1998
SOURCE
Journal of Applied Physics;9/1/1998, Vol. 84 Issue 5, p2735
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Focuses on first order and low-frequency noise measurements that were performed on heterojunction bipolar transistors made of a gallium compound. Decomposition of the base current in to different components; Description of the noise measurements; Extraction of the emitter series resistances; Existence of the passivation layer at the origin of the recombination-type phenomena.
ACCESSION #
1050057

 

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