Second-harmonic generation in periodically poled GaN

Chowdhury, Aref; Ng, Hock M.; Bhardwaj, Manish; Weimann, Nils G.
August 2003
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1077
Academic Journal
We report the experimental demonstration of second-harmonic generation in periodically poled GaN by first-order quasiphase matching. The periodically poled structure was grown by plasma-assisted molecular-beam epitaxy. We observed about 9 μW of second-harmonic power from a fundamental input laser wavelength of 1658.6 nm with a normalized conversion efficiency of 12.76% W[sup -1] cm[sup -2]. The ability to perform nonlinear wavelength conversion by periodic poling and the fact that GaN has a very wide window of transparency, pave the way for GaN to be used for nonlinear optical devices in telecommunications as well as a nonlinear light source for biochemical detection in the far infrared and deep ultraviolet. © 2003 American Institute of Physics.


Related Articles

  • Faceted inversion domain boundary in GaN films doped with Mg. Romano, L. T.; Romano, L.T.; Northrup, J. E.; Northrup, J.E.; Ptak, A. J.; Ptak, A.J.; Myers, T. H.; Myers, T.H. // Applied Physics Letters;10/16/2000, Vol. 77 Issue 16 

    Homoepitaxial GaN films, doped with Mg, were grown by rf-plasma molecular-beam epitaxy on Ga-polarity (0001) templates. Convergent-beam electron diffraction analysis establishes that the film polarity changes from [0001] to [0001_] when the Mg flux during growth is approximately 1 ML/s....

  • Preconditioning of c-plane sapphire for GaN epitaxy by radio frequency plasma nitridation. Heinlein, Christian; Grepstad, Jostein // Applied Physics Letters;7/21/1997, Vol. 71 Issue 3, p341 

    Improves crystalline quality of molecular beam epitaxy grown layers of gallium nitride on sapphire by nitridation of the substrate. Examination of the case for nitridation of c-plane sapphire; Formation of a monolayer of surface nitride; Removal of adventitious surface carbon upon heat...

  • Gas source molecular beam epitaxy of GaN with hydrazine on spinel substrates. Nikishin, S. A.; Temkin, H.; Antipov, V. G.; Guriev, A. I.; Zubrilov, A. S.; Elyukhin, V. A.; Faleev, N. N.; Kyutt, R. N.; Chin, A. K. // Applied Physics Letters;5/11/1998, Vol. 72 Issue 19 

    Growth of high quality wurtzite-structure GaN layers on (111) MgAl[sub 2]O[sub 4] by gas source molecular beam epitaxy is described. Hydrazine was used as a source of active nitrogen. In situ reflection high energy electron diffraction was used to monitor the growth mode. Two-dimensional growth...

  • Characterization of the surface irregularities of cubic GaN using micro-Raman spectroscopy. Liu, Ming S.; Prawer, Steven; Bursill, Les A.; As, D. J.; Brenn, R. // Applied Physics Letters;4/30/2001, Vol. 78 Issue 18, p2658 

    The surface irregularities of molecular-beam-epitaxy-grown cubic GaN on GaAs substrates were characterized by micro-Raman spectroscopy. Some surface irregularities are found to be the result of the mixed phases of cubic (zinc-blende) and hexagonal (wurtzite) GaN, while others originate from the...

  • Reactive molecular-beam epitaxy of GaN layers directly on 6H-SiC(0001). Thamm, A.; Brandt, O. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p944 

    Investigates the quality of gallium nitride layers directly grown on 6H-6SiC(0001) substrates by reactive molecular-beam epitaxy. Achievement of step-flow growth by in situ adjusting conditions such that the (2x2) reconstruction observed during growth is maximized in intensity; Description of...

  • Semi-insulating C-doped GaN and high-mobility AlGan/Gan heterostructures grown... Webb, J. B.; Tang, H. // Applied Physics Letters;8/16/1999, Vol. 75 Issue 7, p953 

    Presents a method of growing semi-insulating gallium nitride epilayers by ammonia molecular beam epitaxy through intentional doping with carbon. Use of a methane ion source as the carbon dopant source; High reproducibility and reliability of high-quality carbon-doped GaN layers with...

  • Theoretical study of GaN growth: A Monte Carlo approach. Wang, Kung; Singh, Jasprit; Pavlidis, Dimitris // Journal of Applied Physics;9/15/1994, Vol. 76 Issue 6, p3502 

    Deals with a study which developed an atomistic model consistent with a variety of experimental observations for gallium nitride (GaN) growth by molecular-beam epitaxy. Monte Carlo approach and application of GaN growth modeling; Specific modeling issues related to GaN growth; Results of growth...

  • Selective growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride by molecular beam.... Cheng, T.S.; Jenkins, L.C. // Applied Physics Letters;3/20/1995, Vol. 66 Issue 12, p1509 

    Reports the use of the molecular beam epitaxy on the growth of zinc-blende, wurtzite, or a mixed phase of gallium nitride. Observation of the growth of gallium nitride; Three phases of films at moderate growth temperatures; Use of high arsenic flux at a high substrate temperature.

  • Low-frequency noise in GaN thin films deposited by rf-plasma assisted molecular-beam epitaxy. Leung, B. H.; Fong, W. K.; Zhu, C. F.; Surya, Charles // Journal of Applied Physics;3/15/2002, Vol. 91 Issue 6, p3706 

    We report detailed investigations of low-frequency excess noise in GaN thin-film cross-bridge structures deposited by rf-plasma assisted molecular-beam epitaxy on top of an intermediate-temperature buffer layer (ITBL) grown at 690 °C. The experimental data indicates strong dependence of the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics