Self-pulsation in InGaN laser diodes with saturable absorber layers

Ohno, T.; Ito, S.; Kawakami, T.; Taneya, M.
August 2003
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1098
Academic Journal
Self-pulsating InGaN laser diodes with a p-type InGaN saturable absorber (SA) layer are demonstrated. The SA layer consists of a 1-nm-thick p-type InGaN well surrounded by 2-nm-thick p-type In[sub 0.02]Ga[sub 0.98]N barriers. The lower barrier of the SA is located on the 18-nm-thick p-type Al[sub 0.3]Ga[sub 0.7]N evaporation-prevention layer of the active region. Self-pulsation is demonstrated for output powers in the range 4 to 22 mW with corresponding self-pulsation frequencies in the range 1.6 to 2.9 GHz. Results indicate that the position of the SA layer in the structure has a strong influence on the carrier lifetime and is responsible for the observation of self-pulsation in these devices. © 2003 American Institute of Physics.


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