Recombination-enhanced formation of the metastable boron–oxygen complex in crystalline silicon

Bothe, Karsten; Hezel, Rudolf; Schmidt, Jan
August 2003
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1125
Academic Journal
The formation process of the boron- and oxygen-related defect complex in crystalline silicon, responsible for the performance degradation of solar cells made on boron-doped Czochralski silicon (Cz–Si), is investigated on Cz–Si solar cells as a function of the applied voltage in the dark at temperatures ranging from 298 to 373 K. We show that the defect formation is not only a consequence of illumination or the application of a forward bias voltage but also occurs under equilibrium conditions at elevated temperatures in the dark. It can be partly suppressed by applying a reverse voltage. Our findings provide clear experimental evidence that a recombination-enhanced mechanism correlated with the total recombination rate is the driving force of the formation of the metastable defect. © 2003 American Institute of Physics.


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