TITLE

Defects in m-face GaN films grown by halide vapor phase epitaxy on LiAlO[sub 2]

AUTHOR(S)
Vanfleet, R.R.; Simmons, J.A.; Maruska, H.P.; Hill, D.W.; Chou, M.M.C.; Chai, B.H.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1139
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Free-standing wafers (50 mm diameter) of GaN were grown by halide vapor phase epitaxy on lattice-matched γ-LiAlO[sub 2]. We report a transmission electron microscopy study of defects and defect densities in these wafers. The growth direction is [101_0]. Stacking faults in the basal plane are seen when viewing the specimen in the [12_10] direction with an average spacing of less than 100 nm. Convergent beam electron diffraction measurements show no switch in the polarity and thus the faults are proposed to be ABABACAC changes in the stacking. Threading dislocations are found to have a correlated arrangement with a density of 3×10[sup 8] cm[sup -2] when viewing the [12_10] direction and widely varying (depending upon location) when viewing in the [0001] direction. These dislocations act as “seeds” for postgrowth surface features that directly exhibit the correlated nature of these threading dislocations. © 2003 American Institute of Physics.
ACCESSION #
10465400

 

Related Articles

  • Characterization of dislocations in GaN by transmission electron diffraction and microscopy techniques. Ponce, F. A.; Cherns, D.; Young, W. T.; Steeds, J. W. // Applied Physics Letters;8/5/1996, Vol. 69 Issue 6, p770 

    A combination of transmission electron microscopy imaging and diffraction techniques is used to characterize crystal defects in homoepitaxial GaN thin films. The Burgers vectors of dislocations is established by combining large-angle convergent beam electron diffraction and conventional...

  • Cleaved GaN facets by wafer fusion of GaN to InP. Sink, R.K.; Keller, S. // Applied Physics Letters;4/8/1996, Vol. 68 Issue 15, p2147 

    Describes a method for achieving perpendicular cleaved facets through wafer fusion that can be used to fabricate gallium nitride (GaN) based in-plane lasers. Demonstration of successful fusion of GaN to InP without void or oxide at the interface; Fabrication of optically flat cleaved GaN...

  • Transmission Electron Microscopy of GaN Columnar Nanostructures Grown by Molecular Beam Epitaxy. Mamutin, V. V.; Cherkashin, N. A.; Vekshin, V. A.; Zhmerik, V. N.; Ivanov, S. V. // Physics of the Solid State;Jan2001, Vol. 43 Issue 1, p151 

    The GaN columnar crystals of nanometric sizes have been grown by molecular beam epitaxy with high-frequency plasma initiation of nitrogen discharge. The types and distribution of defects in these nanostructures on the (0001) sapphire substrates are studied by transmission electron microscopy...

  • Structural characterization of GaN laterally overgrown on a (111)Si substrate. Tanaka, Shigeyasu; Honda, Yoshio; Sawaki, Nobuhiko; Hibino, Michio // Applied Physics Letters;8/13/2001, Vol. 79 Issue 7 

    Using transmission electron microscopy, we have characterized defect structures in laterally overgrown GaN crystals, grown directly on SiO[sub 2] stripe-patterned (111)Si substrates by metalorganic vapor phase epitaxy using AlGaN as an intermediate layer. The width and the period of the stripe...

  • Open-core screw dislocations in GaN epilayers observed by scanning force microscopy and.... Qian, W.; Rohrer, G.S. // Applied Physics Letters;10/16/1995, Vol. 67 Issue 16, p2284 

    Investigates the structure of organometallic vapor phase epitaxy grown alpha-gallium nitride films. Utilization of high-resolution transmission electron microscopy in the analysis; Discovery of the presence of tunnel-like defects in the films; Comparison of the measured dimensions of the...

  • Defect structure in selectively grown GaN films with low threading dislocation density. Sakai, Akira; Sunakawa, Haruo // Applied Physics Letters;10/20/1997, Vol. 71 Issue 16, p2259 

    Characterizes defect structures in gallium nitride (GaN) films grown in hydride vapor-phase epitaxy by transmission electron microscopy. Properties of III-V nitride compounds; Demonstrations of blue- and ultraviolet-light emitting lasers on GaN-based epitaxial films; Reduction of threading...

  • Study of open-core dislocations in GaN films on (0001) sapphire. Vennegues, P.; Beaumont, B. // Applied Physics Letters;5/5/1997, Vol. 70 Issue 18, p2434 

    Examines the columnar defects in gallium nitride films epitaxially grown on sapphire (0001). Application of transmission electron microscopy; Identification of the defects as open-core (0001) Burgers vectors dislocations; Description of defect behavior along the film thickness.

  • Cathodoluminescence mapping of epitaxial lateral overgrowth in gallium nitride. Rosner, S.J.; Girolami, G. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2035 

    Studies the dislocation arrangements in gallium nitride (GaN) films prepared by lateral epitaxial overgrowth by cathodoluminescence mapping and transmission electron microscopy. Low density of electrically active defects in the laterally overgrown material; Individual electrically active defects.

  • Single-crystalline gallium nitride nanobelts. Bae, Seung Yong; Seo, Hee Won; Park, Jeunghee; Yang, Hyunik; Park, Ju Chul; Lee, Soun Young // Applied Physics Letters;7/1/2002, Vol. 81 Issue 1, p126 

    Single-crystalline wurtzite gallium nitride nanobelts were synthesized by thermal reaction of gallium, gallium nitride, and ammonia using iron and boron oxide as catalysts. The structure of nanobelts was investigated by high-resolution transmission electron microscopy with electron energy-loss...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics