Epitaxial growth and large band-gap bowing of ZnSeO alloy

Nabetani, Y.; Mukawa, T.; Ito, Y.; Kato, T.; Matsumoto, T.
August 2003
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1148
Academic Journal
ZnSeO alloy was grown by molecular-beam epitaxy up to 1.3% O composition on GaAs substrate using rf plasma. The crystal structure of epitaxial ZnSeO alloy was zinc-blende. O composition was estimated by a strain-free lattice constant. No phase separation was observed by in situ reflection high-energy electron diffraction and x-ray diffraction. Photoluminescence intensity was larger than that of ZnSe. The peak energy shifted toward lower energies with increasing O composition. The band-gap energy determined by photoluminescence excitation spectra decreased with increasing O composition. A bowing parameter as high as 8 eV was obtained. This large band-gap bowing widens the controllable energy-gap range of II-VI semiconductor. © 2003 American Institute of Physics.


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