TITLE

Composition dependence of polarization fields in GaInN/GaN quantum wells

AUTHOR(S)
Hangleiter, A.; Hitzel, F.; Lahmann, S.; Rossow, U.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1169
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report an experimental determination of the internal polarization field in GaInN/GaN quantum wells, due to piezoelectric and spontaneous polarization, utilizing the quantum confined Stark effect, with fields as large as 3.1 MV/cm at 22% In. From its dependence on quantum well composition and strain, we find that the total field in GaInN is a linear combination of polarization charges from GaN and InN. The piezoelectric constants d[sub 31] for GaN and InN derived from our data are 1.05±0.05 pm/V and 3.7±0.5 pm/V, in fair agreement with theoretical data. © 2003 American Institute of Physics.
ACCESSION #
10465390

 

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