Analysis of ultrathin SiO[sub 2] interface layers in chemical vapor deposition of Al[sub 2]O[sub 3] on Si by in situ scanning transmission electron microscopy

Klie, R.F.; Browning, N.D.; Chowdhuri, A. Roy; Takoudis, C.G.
August 2003
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1187
Academic Journal
The development of Al[sub 2]O[sub 3] as an alternative gate dielectric for microelectronic applications depends on the ability to grow a high-quality nanoscale thin film that forms an atomically abrupt interface with Si. Here, the combination of in situ Z-contrast imaging, electron energy loss spectroscopy and x-ray photoelectron spectroscopy of amorphous Al[sub 2]O[sub 3] films grown by metalorganic chemical vapor deposition shows that excess oxygen incorporated into the film routinely reacts with the Si substrate to form an amorphous SiO[sub 2] interface layer during postdeposition annealing. The intrinsic oxygen-rich environment of all films grown by such techniques and the necessity of postdeposition processing in device applications implies that control and optimization of the SiO[sub 2] interface layers could be of utmost interest for high-κ dielectric stacked structures. © 2003 American Institute of Physics.


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