TITLE

Noise and photoconductive gain in InAs quantum-dot infrared photodetectors

AUTHOR(S)
Zhengmao Ye; Campbell, Joe C.; Zhonghui Chen; Eui-Tae Kim; Madhukar, Anupam
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1234
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report noise characteristics, carrier capture probability, and photoconductive gain of InAs quantum-dot infrared photodetectors with unintentionally doped active regions. At 77 K, a photoconductive gain of 750 was observed at a bias of 0.7 V. The high gain is a result of the low carrier capture probability: p=0.0012. © 2003 American Institute of Physics.
ACCESSION #
10465368

 

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