Organic field-effect transistors by a wet-transferring method

Yong-Young Noh; Jang-Joo Kim; Yase, Kiyoshi; Nagamatsu, Shuichi
August 2003
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1243
Academic Journal
Organic field-effect transistors (OFETs) were prepared from an epitaxially grown film fabricated by a wet-transferring process. 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum(II) was grown by thermal evaporation on the (001) surface of potassium bromide (KBr) single crystals. When the film was grown at room temperature, the planar molecules were aligned orthogonally on the crystal surfaces along the [110] direction with edge-on orientation to the surface normal direction. The epitaxy film was transferred to on SiO[sub 2]/Si surface immediately after removing the KBr on the water surface to product the OFETs. The calculated μ[sub FET] of the OFET for the wet-transferred vertically aligned film were 1.3×10[sup -4] and 2.2×10[sup -4] cm[sup 2] V[sup -1] s[sup -1] at the linear and saturation regions, respectively, at V[sub g]=-50 V at an I[sub ON]/I[sub OFF] (on/off ratios of source–drain current) of 10[sup 4]∼10[sup 5]. © 2003 American Institute of Physics.


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