TITLE

Enhanced quantum efficiency of solar cells with self-assembled Ge dots stacked in multilayer structure

AUTHOR(S)
Alguno, Arnold; Usami, Noritaka; Ujihara, Toru; Fujiwara, Kozo; Sazaki, Gen; Nakajima, Kazuo; Shiraki, Yasuhiro
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/11/2003, Vol. 83 Issue 6, p1258
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the performance of solar cells with stacked self-assembled Ge dots in the intrinsic region of Si-based p-i-n diode. These dots were epitaxially grown on p-type Si(100) substrate via the Stranski–Krastanov growth mode by gas-source molecular beam epitaxy. Enhanced external quantum efficiency (EQE) in the infrared region up to 1.45 μm was observed for the solar cells with stacked self-assembled Ge dots compared with that without Ge dots. Furthermore, the EQE was found to increase with increasing number of stacking. These results show that electron-hole pairs generated in Ge dots can be efficiently separated by the internal electric field, and can contribute to the photocurrent without considerable recombination in Ge dots or at Ge/Si interfaces. © 2003 American Institute of Physics.
ACCESSION #
10465360

 

Related Articles

  • High-efficiency Al0.3Ga0.7As solar cells grown by molecular beam epitaxy. Amano, Chikara; Sugiura, Hideo; Ando, Koshi; Yamaguchi, Masafumi; Saletes, Anne // Applied Physics Letters;10/5/1987, Vol. 51 Issue 14, p1075 

    This letter reports the growth of high-efficiency Al0.3Ga0.7As solar cells by molecular beam epitaxy. As the growth temperature increases from 650 to 750 °C, the concentration of midgap electron traps in the active layers decreases from 4×1015 to less than 3×1013 cm-3 and the hole...

  • Deep-level defects in InGaAsN grown by molecular-beam epitaxy. Kaplar, R. J.; Ringel, S. A.; Kurtz, Steven R.; Klem, J. F.; Allerman, A. A. // Applied Physics Letters;6/24/2002, Vol. 80 Issue 25, p4777 

    Deep-level transient spectroscopy (DLTS) studies on both p-type unintentionally doped and n-type (Si-doped), 1.05 eV band gap InGaAsN grown by molecular-beam epitaxy are reported. Two majority-carrier hole traps were observed in p-type material, H3′ (0.38 eV) and H4′ (0.51 eV), and...

  • Al0.2Ga0.8As p+-n junction solar cells grown by molecular beam epitaxy. Amano, Chikara; Shibukawa, Atsushi; Yamaguchi, Masafumi // Journal of Applied Physics;10/1/1985, Vol. 58 Issue 7, p2780 

    Presents a study which fabricated solar cells grown by molecular beam epitaxy and examined the relationship between cell properties and growth conditions. Method of the study; Results and discussion; Conclusion.

  • Atomic hydrogen-assisted molecular beam epitaxy for the fabrication of multi-quantum-well solar... Suzuki, Yoshiyuki; Kikuchi, Takatoshi // Journal of Applied Physics;11/15/1999, Vol. 86 Issue 10, p5858 

    Presents information on a study which applied the atomic hydrogen-assisted molecular beam epitaxy technique to fabricate compound semiconductor solar cells. Application of solar cells; Methodology; Results and discussion; Conclusion.

  • Deep level defect study of molecular beam epitaxially grown silicon films. Xie, Y. H.; Wu, Y. Y.; Wang, K. L. // Applied Physics Letters;1/27/1986, Vol. 48 Issue 4, p287 

    We report the result of the study on the electrically active deep level defects in Si films grown by molecular beam epitaxy. A deep level defect at Ec-0.58 eV is consistently obtained for samples grown on substrates with purposely contaminated surfaces. The observed defects are all located...

  • Properties of Si layers grown by molecular beam epitaxy at very low temperatures. Jorke, H.; Kibbel, H.; Schäffler, F.; Casel, A.; Herzog, H.-J.; Kasper, E. // Applied Physics Letters;2/27/1989, Vol. 54 Issue 9, p819 

    (100) silicon molecular beam epitaxy films with etch pit densities below 103 cm-2 and χmin values of 3.3–3.9% were grown at very low temperatures (Ts =250–350 °C). Although dopant activation is significantly below unity at n=1018 Sb atoms/cm3 Hall mobilities of homogeneously...

  • Isotope-Pure Silicon Layers Grown by MBE. Godisov, O. N.; Kaliteevsky, A. K.; Safronov, A. Yu.; Korolev, V. I.; Ber, B. Ya.; Davydov, V. Yu.; Denisov, D. V.; Kaliteevsky, M. A.; Kop�ev, P. S.; Kovarsky, A. P.; Ustinov, V. M.; Pohl, H.-J. // Semiconductors;Dec2002, Vol. 36 Issue 12, p1400 

    Molecular-beam epitaxy with a solid source was used to grow silicon layers enriched with [sup 28]Si and [sup 30]Si isotopes to 99.93 and 99.34%, respectively. Secondary-ion mass spectrometry and Raman scattering spectroscopy were applied to demonstrate the high isotopic purity and crystal...

  • Evidence of Si presence in self-assembled Ge islands deposited on a Si(001) substrate. Magidson, V.; Regelman, D. V.; Beserman, R.; Dettmer, K. // Applied Physics Letters;8/24/1998, Vol. 73 Issue 8 

    Nominal Ge islands were grown by a molecular beam epitaxy technique on a Si(001) substrate. Island positions and shapes were measured by atomic force microscopy. Two types of islands with different sizes and shapes are present. The Si concentration distribution inside the islands was measured by...

  • p-type delta-doped layers in silicon: Structural and electronic properties. Mattey, N. L.; Dowsett, M. G.; Parker, E. H. C.; Whall, T. E.; Taylor, S.; Zhang, J. F. // Applied Physics Letters;10/15/1990, Vol. 57 Issue 16, p1648 

    We report on the properties of p-type delta-doped layers prepared in molecular beam epitaxy-Si by growth interruption and evaporation of elemental B. Secondary-ion mass spectrometry measurements at several primary ion energies have been used to show that the full width at half maximum is ∼2...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics