TITLE

Negative Luminescence at 3.9 �m in InGaAsSb-Based Diodes

AUTHOR(S)
A&icaron;daraliev, M.; Zotova, N.V.; Karandashev, S.A.; Matveev, B.A.; Remenny&icaron;, M.A.; Stus, N.M.; Talalakin, G.N.
PUB. DATE
August 2003
SOURCE
Semiconductors;Aug2003, Vol. 37 Issue 8, p927
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Current�voltage characteristics, as well as spectral and power�current characteristics, for the emission of InAsSbP/InGaAsSb double-heterostructure diodes grown on InAs substrates were measured under forward and reverse biases in the temperature range of 25�90�C. It was shown that the conversion efficiency for negative luminescence, which occurs due to the extraction of charge carriers from the regions adjacent to the p�n junction at temperatures ~90�C, is higher than the conversion efficiency for electroluminescence. Narrowing of the negative luminescence spectra in diodes with a built-in cavity was observed. � 2003 MAIK �Nauka / Interperiodica�.
ACCESSION #
10454848

 

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