Low-threshold lasing of InGaN vertical-cavity surface-emitting lasers with dielectric distributed Bragg reflectors

Tawara, Takehiko; Gotoh, Hideki; Akasaka, Tetsuya; Kobayashi, Naoki; Saitoh, Tadashi
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p830
Academic Journal
Lasing action is achieved in InGaN vertical-cavity surface-emitting lasers (VCSELs) with dielectric distributed Bragg reflectors (DBRs). We fabricated III-nitride VCSELs by removing a SiC substrate from a III-nitride cavity with a dry etching technique and then wafer bonding the cavity and SiO[SUB2]/ZrO[SUB2] DBRs. These VCSELs have a high quality factor of 460 and a spontaneous emission factor of 10[SUP-2]. We observed lasing at a wavelength of 401 nm at room temperature with optical pumping. This lasing action was demonstrated at a low threshold of 5.1 mJ/cm[SUP2] by using a high-quality crystalline cavity and quantum-well layers without surface roughening or cracking.


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