Comparison of Cu electromigration lifetime in Cu interconnects coated with various caps

Hu, C.-K.; Gignac, L.; Liniger, E.; Herbst, B.; Rath, D. L.; Chen, S. T.; Kaldor, S.; Simon, A.; Tseng, W.-T.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p869
Academic Journal
Electromigration in Cu Damascene lines with bamboo-like grain structures, either capped with Ta/TaN, SiN[SUBx], SiC[SUBx]N[SUBy]H[SUBz] layers, or without any cap, was investigated. A thin Ta/TaN cap on top of the Cu line surface significantly improves electromigration lifetime when compared with lines without a cap and with lines capped with SiN[SUBx] or SiC[SUBx]N[SUBy]H[SUBz]. The activation energy for electromigration increased from 0.87 eV for lines without a cap to 1.0-1.1 eV for samples with SiN[SUBx] or SiC[SUBx]N[SUBy]H[SUBz] caps and to 1.4 eV for Ta/TaN capped samples.


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