Strain analysis of a quantum-wire system produced by cleaved edge overgrowth using grazing incidence x-ray diffraction

Sztucki, M.; Schülli, T. U.; Metzger, T. H.; Chamard, V.; Schuster, R.; Schuh, D.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p872
Academic Journal
A GaAs surface layer of 10 nm thickness was grown on the cleaved edge of an In[SUB0.1]Al[SUB0.9]As/Al[SUB0.33]Ga[SUB0.67]As multilayer in order to induce a lateral periodic strain modulation. We apply surface sensitive grazing incidence x-ray diffraction to distinguish between compositional/ morphological and purely strain induced modulations. The experimentally determined strain profile is confirmed by finite-element model calculations. The GaAs layer is found to be purely strain modulated with an average lattice parameter change of (0.8 ± 0.1)% with respect to relaxed GaAs.


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