Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

Kosugi, Ryoji; Fukuda, Kenji; Arai, Kazuo
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p884
Academic Journal
The method of oxidation by atomic oxygen has been developed for gate oxide formation in SiC metal-oxide-semiconductor (MOS) (devices. Ozone (O[SUB3]) -admixed oxygen (O[SUB2]) gas is introduced into the cold-wall oxidation furnace, where atomic oxygen in a ground state is formed by thermal decomposition of O[SUB3] molecules at elevated sample temperatures. The growth rate of oxide in the O[SUB3]-admixed gas shows a maximum at around 666.4 Pa and 950-1200 °C, whereas the rate in pure O[SUB2] gas is negligible below 6664.5 Pa. Interface trap density (D[SUBit]) of the MOS capacitors fabricated using atomic oxygen strongly depends on the oxidization temperature; oxidation at 1200 °C results in significant reduction of D[SUBit] in comparison with that at 950 °C.


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