TITLE

Thermal oxidation of (0001) 4H-SiC at high temperatures in ozone-admixed oxygen gas ambient

AUTHOR(S)
Kosugi, Ryoji; Fukuda, Kenji; Arai, Kazuo
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p884
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The method of oxidation by atomic oxygen has been developed for gate oxide formation in SiC metal-oxide-semiconductor (MOS) (devices. Ozone (O[SUB3]) -admixed oxygen (O[SUB2]) gas is introduced into the cold-wall oxidation furnace, where atomic oxygen in a ground state is formed by thermal decomposition of O[SUB3] molecules at elevated sample temperatures. The growth rate of oxide in the O[SUB3]-admixed gas shows a maximum at around 666.4 Pa and 950-1200 °C, whereas the rate in pure O[SUB2] gas is negligible below 6664.5 Pa. Interface trap density (D[SUBit]) of the MOS capacitors fabricated using atomic oxygen strongly depends on the oxidization temperature; oxidation at 1200 °C results in significant reduction of D[SUBit] in comparison with that at 950 °C.
ACCESSION #
10404936

 

Related Articles

  • Mechanism of negative-bias-temperature instability. Blat, C. E.; Nicollian, E. H.; Poindexter, E. H. // Journal of Applied Physics;2/1/1991, Vol. 69 Issue 3, p1712 

    Presents a study that evaluated the mechanism of negative-bias-temperature instability in metal-oxide-silicon capacitors. Measurement of the total charge density; Determination of the oxide-fixed charge density and interface-trap charge density; Effect of water in the oxide on the mechanism of...

  • ac capacitance and conductance measurements of two-terminal metal-oxide-semiconductor-oxide-semiconductor capacitors on silicon-on-insulator substrates. Flandre, D.; Campabadal, F.; Esteve, J.; Lora-Tamayo, E.; Van de Wiele, F. // Journal of Applied Physics;11/1/1991, Vol. 70 Issue 9, p5111 

    Presents a study which reported the results of combined alternating current capacitance and conductance measurements on two-terminal metal-oxide-semiconductor capacitors fabricated in a silicon-on-insulator substrate formed by oxygen implantation. Description of the device structures; Method...

  • Nanostructured heterophase thin films of lead zirconate titanate. Afanasjev, V. P.; Petrov, A. A. // Physics of the Solid State;Jul2009, Vol. 51 Issue 7, p1332 

    The results of a comprehensive study of electrophysical and photoelectric properties of capacitor structures are analyzed within the proposed model of Pb(ZrTi)O3 (PZT) films with an excess lead content, which is based on the presence of heterophase intergrain boundaries. It is shown that aging...

  • Maxwell–Wagner effect in hexagonal BaTiO3 single crystals grown by containerless processing. Yu, Jianding; Paradis, Paul-François; Ishikawa, Takehiko; Yoda, Shinichi // Applied Physics Letters;10/4/2004, Vol. 85 Issue 14, p2899 

    Oxygen-deficient hexagonal BaTiO3 single crystals, with dielectric constant [variant_greek_epsilon]′∼105 and loss component tan δ∼0.13 at room temperature and a linear temperature dependence of [variant_greek_epsilon]′ in the range 70–100 K, was analyzed by...

  • Co-Doped ZnO Dilute Magnetic Semiconductor. Prater, John T.; Ramachandran, Shivaraman; Tiwari, Ashutosh; Narayan, Jagdish // Journal of Electronic Materials;May2006, Vol. 35 Issue 5, p852 

    This paper reports on recent findings in the Co-doped ZnO system where as-deposited samples with n-type semiconductor properties display magnetic ordering above room temperature. Detailed atomic scale structural characterization has eliminated clustering and second-phase formation as the source...

  • Facile route to tin oxide containing mesoporous silica composites with room-temperature photoluminescence. Zhicheng Liu; Hangrong Chen; Weiming Huang; Jinlou Gu; Wenbo Bu; Zile Hua; Jianlin Shi // Journal of Materials Research;Mar2006, Vol. 21 Issue 3, p15 

    In this paper, we report a facile route, the tin vapor treatment method, to prepare tin oxide containing mesoporous silica composites (TOMS), which display room-temperature photoluminescence (RT-PL). Among them, TOMS-1 and TOMS-2 were synthesized from mesoporous silica SBA-15 and KIT-6,...

  • Direct and trap-assisted elastic tunneling through ultrathin gate oxides. Jime´nez-Molinos, F.; Ga´miz, F.; Palma, A.; Cartujo, P.; Lo´pez-Villanueva, J. A. // Journal of Applied Physics;4/15/2002, Vol. 91 Issue 8, p5116 

    The direct and assisted-by-trap elastic tunnel current in metal–oxide–semiconductor capacitors with ultrathin gate oxide (1.5–3.6 nm) has been studied. Bardeen’s method has been adapted to obtain the assisted tunnel current, in addition to the direct tunnel current....

  • Combustion Modes and Mechanisms of High‐Temperature Oxidation of Magnesium in Oxygen. Gol'dshleger, U. I.; Amosov, S. D. // Combustion, Explosion, & Shock Waves;May/Jun2004, Vol. 40 Issue 3, p275 

    Oxidation and combustion of single magnesium particles in an oxygen-argon mixture is experimentally studied. A diagram of high-temperature oxidation of magnesium is constructed, and a relation between the structural features of the oxide film and macrokinetics of high-temperature oxidation and...

  • Oxidation resistance in structural ceramics based on refractory materials. Logunov, A. V.; Sannikova, S. N.; Lukin, E. S. // Refractories & Industrial Ceramics;Jan2006, Vol. 47 Issue 1, p58 

    Refractory oxygen-free compounds with a melting point above 2500°C show promise for development of thermostressed ceramic materials. The individual use of oxygen-free materials is limited because of their low-temperature oxidability which poses problems for manufacturing technology....

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics