Optical and structural anisotropy of InP/GaInP quantum dots for laser applications

Manz, Y. M.; Christ, A.; Schmidt, O. G.; Riedl, T.; Hangleiter, A.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p887
Academic Journal
Self-assembled InP quantum dots, embedded in Ga[SUB0.52]In[SUB0.48]P and grown by solid source molecular-beam epitaxy, exhibit strong structural and optical anisotropy. Photoluminescence measurements reveal that the quantum dots are elongated in [1&1bar;0] crystal direction and the optical transitions of both the dots and the surrounding GaInP material dominate for light polarized along this direction, whereas embedded compressively strained Ga[SUBx]In[SUB1-x]P quantum wells behave isotropically. The comparison of the optical gain of a strained Ga[SUBx]In[SUB1-x]P quantum well laser and a threefold stacked quantum-dot laser in [110] and [1&1bar;0] directions (edge emission) emphasizes this difference. The gain of the quantum-well laser shows no directional dependence. The quantum-dot laser reveals significantly larger gain for light propagating perpendicular to the dot elongation. Thus, particular care has to be taken to align the cavities of InP/GaInP quantum-dot lasers in [110] direction.


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