Investigation of boron diffusion in 6H-SiC

Gao, Y.; Soloviev, S. I.; Sudarshan, T. S.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p905
Academic Journal
p-type doping of 6H-SiC was implemented by diffusion of boron at temperatures higher than 1900 °C. The doping profiles were clearly divided into steep (zone I) and long-tail (zone II) regions. The boron diffusions in both regions are well fitted by er f c functions but with different diffusion coefficients, which are an activation energy (E[SUBA]) of 6.1 eV and a prefactor (D[SUB0]) of 3.2 cm[SUP2]/s for zone I and 4.6 eV and 0.1 cm[SUP2]/s for zone II, respectively. Further, it has been confirmed that the boron acceptors in zone I are primarily located at shallow energy levels (∼300 meV) and the ones in zone II are located at deep energy levels (∼700 meV).


Related Articles

  • Accelerating rare events while overcoming the low-barrier problem using a temperature program. Divi, Srikanth; Chatterjee, Abhijit // Journal of Chemical Physics;5/14/2014, Vol. 140 Issue 18, p184115-1 

    We present a hierarchical coarse-grained simulation technique called the temperature programmed molecular dynamics (TPMD) method for accelerating molecular dynamics (MD) simulations of rare events. The method is targeted towards materials where a system visits many times a collection of energy...

  • New Results On 8B And 23O Ground State Properties. Cortina-Gil, D.; Fernandez-Vazquez, J.; Attallah, F.; Baumann, T.; Benlliure, J.; Borge, M. J. G.; Chulkov, L.; Forssén, C.; Fraile, L. M.; Geissel, H.; Gerl, J.; Ithashi, K.; Janik, R.; Jonson, B.; Karlsson, S.; Lenske, H.; Mandal, S.; Markenroth, K.; Meister, M. // AIP Conference Proceedings;2003, Vol. 656 Issue 1, p315 

    One-nucleon removal reactions at relativistic energies have been used as spectroscopic tool to obtain information about the ground state properties of [sup 8]B and [sup 23]O. Using the FRS at GSI, the longitudinal momentum distributions of the emerging fragments after breakup and the one-nucleon...

  • Properties of activated states of oxygen and carbon atoms during diffusion in a-Ti. Vykhodets, V. B.; Fishman, A. Ya. // JETP Letters;9/25/98, Vol. 68 Issue 6, p539 

    Activated energy states of interstitial atoms in a-Ti crystals are investigated. Previous precision experiments on the anisotropy of the diffusion coefficients D[sub zz]/D[sub xx] in this system revealed that d(D[sub zz]/D[sub xx])/dT has different signs for oxygen and carbon. It is shown that...

  • Kinetic Monte Carlo Study on Boron Diffusion with Carbon Pre-implant posterior to Amorphization Process. Park, S. Y.; Sung, K. S.; Won, T. Y. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p77 

    We report our kinetic Monte Carlo (kMC) study of the carbon co-implant impact on the pre-amorphization implant (PAI) process. We employed BCA (Binary Collision Approximation) approach for the acquisition of the initial as-implant dopant profile and kMC method for the simulation of diffusion...

  • Determination of recombination center position from the temperature dependence of minority carrier lifetime in the base region of p-n junction solar cells. Bhattacharya, D. K.; Mansingh, Abhai; Swarup, P. // Journal of Applied Physics;4/15/1985, Vol. 57 Issue 8, p2942 

    Presents a study that measures the minority carrier lifetime in the base region of n[sup+]-p silicon solar cells in the temperature range ~77-400°Kelvin using the open-circuit voltage decay technique. Temperature variation measurements; Role of the minority carrier lifetime in determining...

  • Electronic properties of iron-boron pairs in crystalline silicon by temperature- and injection-level-dependent lifetime measurements. Birkholz, Jens E.; Bothe, Karsten; Macdonald, Daniel; Schmidt, Jan // Journal of Applied Physics;5/15/2005, Vol. 97 Issue 10, p10Q910 

    Iron-boron pairs in crystalline silicon are studied by measuring the recombination lifetime as a function of injection density, doping concentration, and temperature. The characteristic crossover point of the injection-level-dependent carrier lifetime curves measured before and after optical...

  • Magnetic states and optical properties of single-layer carbon-doped hexagonal boron nitride. Park, Hyoungki; Wadehra, Amita; Wilkins, John W.; Castro Neto, Antonio H. // Applied Physics Letters;6/18/2012, Vol. 100 Issue 25, p253115 

    We show that carbon-doped hexagonal boron nitride (h-BN) has extraordinary properties with many possible applications. We demonstrate that the substitution-induced impurity states, associated with carbon atoms, and their interactions dictate the electronic structure and properties of C-doped...

  • Escape probability of geminate electron-ion recombination in the limit of large electron mean free path. Tachiya, M.; Schmidt, W.F. // Journal of Chemical Physics;2/15/1989, Vol. 90 Issue 4, p2471 

    Studies the geminate electron-ion recombination in the limit of large electron mean free path by using the concept of diffusion in energy space. Derivation of the energy diffusion equation; Energy diffusion coefficient; Analytical expression for the escape probability of the electron-ion pair.

  • Anomalous magnetocaloric effect in van vleck paramagnet HoVO4 near energy level crossing. Kazei, Z. A.; Snegirev, V. V.; Broto, J.-M.; Rakoto, H. // JETP Letters;Aug2008, Vol. 87 Issue 12, p687 

    The anomalous magnetocaloric effect in singlet rare-earth paramagnets near energy level crossing has been experimentally observed for the first time. The magnetization and differential magnetic susceptibility of Ho1 - x Y x VO4 crystals ( x = 0, 0.5) measured along the tetragonal axis in a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics