TITLE

Investigation of boron diffusion in 6H-SiC

AUTHOR(S)
Gao, Y.; Soloviev, S. I.; Sudarshan, T. S.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
p-type doping of 6H-SiC was implemented by diffusion of boron at temperatures higher than 1900 °C. The doping profiles were clearly divided into steep (zone I) and long-tail (zone II) regions. The boron diffusions in both regions are well fitted by er f c functions but with different diffusion coefficients, which are an activation energy (E[SUBA]) of 6.1 eV and a prefactor (D[SUB0]) of 3.2 cm[SUP2]/s for zone I and 4.6 eV and 0.1 cm[SUP2]/s for zone II, respectively. Further, it has been confirmed that the boron acceptors in zone I are primarily located at shallow energy levels (∼300 meV) and the ones in zone II are located at deep energy levels (∼700 meV).
ACCESSION #
10404929

 

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