Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation

Sun, Chi-Kuang; Chen, Yen-Hung; Shi, Jin-Wei; Chiu, Yi-Jen; Gan, Kian-Giap; Bowers, John E.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p911
Academic Journal
Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation was investigated by femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices. An increase in the electron lifetime can be observed when the electron density is higher than 3 × 10[SUP17] cm[SUP-3]. This effect is attributed to prolonged electron relaxation due to intervalley scattering of highly excited electrons and associated hot phonon effects. Our conclusion is further supported by bias-dependent studies where intervalley scattering was achieved using high electric fields.


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