Effect of boron neutralization on interface state creation after direct tunneling injections at 100 °C in 2,3-nm ultrathin gate oxides

Zander, D.; Boch, J.; Saigné, F.; Meinertzhagen, A.; Simonetti, O.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p926
Academic Journal
Interface state creation, after different positive and negative electron direct tunneling injections at elevated temperature are studied. A degradation peak at 100 °C is observed after positive stresses. This peak is attributed to the propensity for boron to be neutralized by hydrogen at this temperature.


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