Interface recombination velocity of silicon-on-insulator wafers measured by microwave reflectance photoconductivity decay method with electric field

Kuwayama, Toshio; Ichimura, Masaya; Arai, Eisuke
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p928
Academic Journal
The interface recombination velocity of silicon-on-insulator (SOI) wafers was measured by the microwave-reflectance photoconductivity-decay method. The carrier lifetime was obtained with interface recombination suppressed by applying voltage between the SOI layer and the substrate. The interface recombination velocity was then estimated by comparing two lifetime values with and without voltage application. The velocity is from 500 to 1800 cm/s, relatively large as for thermally oxidized Si/SiO[SUB2] interfaces.


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