Hydrogenation of Si from SiN[sub x](H) films: Characterization of H introduced into the Si

Jiang, Fan; Stavola, Michael; Rohatgi, A.; Kim, D.; Holt, J.; Atwater, H.; Kalejs, J.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p931
Academic Journal
A promising method to introduce H into multicrystalline Si solar cells in order to passivate bulk defects is by the postdeposition annealing of a H-rich, SiN[SUBx] surface layer. It has previously been difficult to characterize the small concentration of H that is introduced by this method. Infrared spectroscopy has been used together with marker impurities in the Si to determine the concentration and depth of H introduced into Si from an annealed SiN[SUBx] film.


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