Rectification properties of layered boron nitride films on silicon

Nose, K.; Tachibana, K.; Yoshida, T.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p943
Academic Journal
Cubic boron nitride (c-BN)/turbostratic boron nitride (t-BN) layered films were deposited on n-type Si substrates, and their rectification properties were investigated. Rectification in a typical n-type/ p-type diode was observed in the current-voltage characteristics of c-BN film with a thin t-BN initial layer. However, the rectification polarity was inverted in the double-layered film with thick t-BN, where conduction was found to be caused by Schottky and Frenkel-Poole emission conduction mechanisms, depending on the range of bias applied. In the case of a thick t-BN single-layered film, the Frenkel-Poole emission conduction mechanism governed the conduction.


Related Articles

  • Modeling the diode characteristics of boron nitride/silicon carbide heterojunctions. Brötzmann, Marc; Gehrke, Hans-Gregor; Vetter, Ulrich; Hofsäss, Hans // Applied Physics Letters;9/6/2010, Vol. 97 Issue 10, p103505 

    In this work, we investigate metal–amorphous semiconductor–semiconductor diodes made up of boron nitride/silicon carbide (BN/SiC) heterojunctions. We show that a general conduction model can be applied to this system to explain the measured current-voltage diode characteristics....

  • Electron field emission from boron-nitride nanofilms. Sugino, Takashi; Kimura, Chiharu; Yamamoto, Tomohide // Applied Physics Letters;5/13/2002, Vol. 80 Issue 19, p3602 

    Hexagonal polycrystalline boron-nitride (BN) films are synthesized on Si substrates by plasma-assisted chemical-vapor deposition. In the case of BN films thicker than 20 nm, the turn-on electric field of the electron emission decreases with increasing surface roughness. On the other hand, in the...

  • In situ texture monitoring for growth of oriented cubic boron nitride films. Litvinov, Dmitri; Clarke, Roy // Applied Physics Letters;2/15/1999, Vol. 74 Issue 7, p955 

    Examines evidence for oriented growth of pure-phase cubic boron nitride on silicon substrates. Deposition of the films at high temperatures by reduced-bias ion-assisted sputtering; Reflection high-energy electron diffraction applied to texture monitoring in polycrystalline films used as an in...

  • Low energy kinetic threshold in the growth of cubic boron nitride films. Kidner, S.; Taylor II, C.A. // Applied Physics Letters;4/4/1994, Vol. 64 Issue 14, p1859 

    Examines the growth of cubic boron nitride (cBN) films by magnetron sputtering on silicon substrate. Presence of negative substrate bias voltage in films; Growth of films in nitrogen plasma; Role of energetic ions in the formation of cBN.

  • Plastic Fragmentation in Crystals of Diamond-Like Hexagonal BN- and SiC-Phases. Oleınik, G. S.; Danilenko, N. V. // Crystallography Reports;Sep2002, Vol. 47 Issue 5, p842 

    The processes of plastic macro- and microchanges in the shape of 2H-BN and 6H-SiC crystals during their deformation under high pressures (7.7 GPa) and temperatures (1200-1600°C) have been studied by transmission electron microscopy. It is established that deformation in crystals with a high...

  • Cubic boron nitride synthesis in low-density supersonic plasma flows. Berns, D.H.; Cappelli, M.A. // Applied Physics Letters;5/6/1996, Vol. 68 Issue 19, p2711 

    Examines the synthesis of cubic boron nitride grown on silicon in low density supersonic plasma jet flows. Use of nitrogen and argon gas mixtures in the arc discharge operation; Analysis of the films by infrared absorption and X-ray photoelectron spectroscopy; Sensitivity of deposition to...

  • Synthesizing boron nitride nanotubes filled with SiC nanowires by using carbon nanotubes as... Weiqiang Han; Redlich, Philipp; Ernst, Frank; Ruhle, Manfred // Applied Physics Letters;9/27/1999, Vol. 75 Issue 13, p1875 

    Describes a method to synthesize silicon carbide-filled boron nitride nanotubes simultaneously in high yield by using carbon nanotubes as templates. Combining both carbon nanotube-substitution reaction and confined reaction.

  • Structural and electronic properties of boron nitride thin films containing silicon. Ronning, C.; Banks, A.D. // Journal of Applied Physics;11/1/1998, Vol. 84 Issue 9, p5046 

    Focuses on the achievement of the incorporation of silicon into boron nitride films during ion beam assisted deposition growth. How a gradual change from cubic boron nitride (c-BN) to hexagonal boron nitride (h-BN) was observed; Indication of the ultraviolet photoelectron spectroscopy, field...

  • Cubic boron nitride deposition on silicon substrates at room temperature by KrF excimer laser ablation of h-BN. Acquaviva, S.; Leggieri, G.; Luches, A.; Perrone, A.; Zocco, A.; Laidani, N.; Speranza, G.; Anderle, M. // Applied Physics A: Materials Science & Processing;2000, Vol. 70 Issue 2, p197 

    Abstract. A hexagonal-BN target was ablated by high-fluence (6 and 12 J/cm[sup 2]) KrF excimer laser pulses in low-pressure (5 Pa) N[sub 2] atmosphere, without any aid of ion bombardment and heating of the Si substrate. Investigations of the deposited films show that the cubic-BN phase was...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics