TITLE

Rectification properties of layered boron nitride films on silicon

AUTHOR(S)
Nose, K.; Tachibana, K.; Yoshida, T.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p943
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Cubic boron nitride (c-BN)/turbostratic boron nitride (t-BN) layered films were deposited on n-type Si substrates, and their rectification properties were investigated. Rectification in a typical n-type/ p-type diode was observed in the current-voltage characteristics of c-BN film with a thin t-BN initial layer. However, the rectification polarity was inverted in the double-layered film with thick t-BN, where conduction was found to be caused by Schottky and Frenkel-Poole emission conduction mechanisms, depending on the range of bias applied. In the case of a thick t-BN single-layered film, the Frenkel-Poole emission conduction mechanism governed the conduction.
ACCESSION #
10404916

 

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