Gettering of Pd to implantation-induced nanocavities in Si

Brett, D. A.; de M. Azevedo, G.; Llewellyn, D. J.; Ridgway, M. C.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p946
Academic Journal
The gettering of Pd to nanocavities in Si for implantation doses ranging from 5 × 10[SUP13] to 1 × 10[SUP15] cm[SUP-2] and annealing temperatures ranging from 750 to 1050 °C was investigated using Rutherford backscattering and cross-sectional transmission electron microscopy. For a given annealing temperature, the gettering efficiency increased as the dose decreased. For a given dose, maximum gettering efficiency was achieved at the intermediate temperatures studied. Competition between silicide formation and nanocavity gettering limited gettering efficiency.


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