TITLE

Low tunnel magnetoresistance dependence versus bias voltage in double barrier magnetic tunnel junction

AUTHOR(S)
Colis, S.; Gieres, G.; Bär, L.; Wecker, J.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p948
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report on the magnetic and transport properties of [IrMn[SUB8] /CoFe[SUB1.5]]/AlOx[SUB1.2]/[CoFe[SUB1]/NiFe[SUB5]/CoFe[SUB1]]/AlOx[SUB1.2]/[CoFe[SUB1.5]/IrMn[SUB8]](nanometer) double magnetic tunnel junctions (DMTJs) deposited by magnetron sputtering and patterned using optical lithography. The tunnel magnetoresistance (TMR) versus the bias voltage presents a symmetric characteristic, which indicates a good and similar quality of both AlO[SUBx] barriers. The junctions show a resistance-area product about 35 kΩ μm[SUP2], a high TMR at room temperature of 49.5%, and a high bias voltage at which the TMR signal is decreased to half of its maximum value,V[SUPDMTJ,SUB7frac12;] = 1.33 V. Both hard magnetic layers are rigid in negative field up to 51.5 kA/m, while the coercive field of the soft layer is around 1.1 kA/m. The large difference of coercive fields, combined with the large TMR and V[SUB½], makes these systems very promising for spin electronic devices.
ACCESSION #
10404914

 

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