TITLE

Magnetization-dependent rectification effect in a Ge-based magnetic heterojunction

AUTHOR(S)
Tsui, F.; Ma, L.; He, L.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p954
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We report a study of a promising Ge-based magnetic heterojunction diode composed of a CoMn-doped Ge film grown epitaxially on lightly doped n-type Ge (001) substrate. The current rectification of the diode can be controlled either by the bias voltage or by the magnetic field. The findings not only demonstrate the viability of producing fully electronic spin devices, but also provide relevant parameters for one type of devices that are compatible with current Si-based device technology.
ACCESSION #
10404912

 

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