YBa[sub 2]Cu[sub 3]O[sub 7-δ] step-edge Josephson junctions fabricated on sapphire substrates

Ming, Bin; Venkatesan, T.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p963
Academic Journal
Sapphire is an ideal substrate for cryogenic device technologies. We report here the fabrication of Yba[SUB2]Cu[SUB3]O[SUB7-δ] step-edge junctions on the R-plane (1&1bar;02) sapphire substrates. With an "overhang" shadow mask produced by a photolithography technique, a steep step edge was created on the CeO[SUB2] buffer layer by Ar[SUP+] ion milling with optimized parameters for minimum ion-beam divergence. The step angle was determined to be in excess of 80° by atomic force microscopy. Josephson junctions fabricated from those step edges exhibited resistively shunted junction like current-voltage characteristics. I[SUBc]R[SUBn] values in the 200-500 μV range were measured at 77 K. Shapiro steps were observed under microwave irradiation. The magnetic field dependence of the junction I[SUBc] indicates uniform current distribution.


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