InGaAs/GaAs three-dimensionally-ordered array of quantum dots

Mazur, Yu. I.; Ma, W. Q.; Wang, X.; Wang, Z. M.; Salamo, G. J.; Xiao, M.; Mishima, T. D.; Johnson, M. B.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p987
Academic Journal
We report on the first fabrication of (In,Ga)As/GaAs quantum dots with both vertical and lateral ordering forming a three-dimensional array. An investigation of the photoluminescence spectra from the ordered array of quantum dots, as a function of both temperature and optical excitation intensity, reveals both a lateral and vertical transfer of excitation.


Related Articles

  • Temperature dependence of the photoluminescence emission from thiol-capped PbS quantum dots. Turyanska, L.; Patanè, A.; Henini, M.; Hennequin, B.; Thomas, N. R. // Applied Physics Letters;3/5/2007, Vol. 90 Issue 10, p101913 

    The authors report the temperature dependence of the near-infrared photoluminescence (PL) emission from thiol-capped PbS quantum dots. The high thermal stability of the PL allows the authors to study the thermal broadening of the dot emission over an extended temperature range (4–300 K)....

  • Coexistence of type-I and type-II band alignments in In0.46Al0.54As/ Ga0.46Al0.54As self-assembled quantum dots. Linlin Su; Baolai Liang; Ying Wang; Qinglin Guo; Shufang Wang; Guangsheng Fu; Wang, Zhiming M.; Mazur, Yuriy I.; Ware, Morgan E.; Salamo, Gregory J. // Applied Physics Letters;11/2/2015, Vol. 107 Issue 18, p1 

    Optical properties of In0.46Al0.54As/ Ga0.46Al0.54As quantum dots (QDs) have been investigated by photoluminescence (PL). At a low temperature of 8K, the PL peak energy blue-shifts 44 meV and the linewidth broadens by 21 meV as the excitation intensity increases by four orders of magnitude. As...

  • Near-field optical fiber probe optimized for illumination-collection hybrid mode operation.  // Applied Physics Letters;5/10/1999, Vol. 74 Issue 19, p2773 

    Studies near-field optical fiber probe optimized for illumination-collection hybrid mode operation. Aperture of the probe developed; Photoluminescence image of single quantum dots.

  • Staircase-like spectral dependence of ground-state luminescence time constants in high-density InAs/GaAs quantum dots. Mazur, Yu. I.; Tomm, J. W.; Petrov, V.; Tarasov, G. G.; Kissel, H.; Walther, C.; Zhuchenko, Z. Ya.; Masselink, W. T. // Applied Physics Letters;5/21/2001, Vol. 78 Issue 21, p3214 

    Time-resolved photoluminescence (PL) from InAs/GaAs quantum dots with a bimodal size distribution is used to investigate the dynamic carrier-transfer processes which couple transfer between similarly sized quantum dots and between quantum dots in different size categories. The relationship...

  • Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission. Saito, Hideaki; Nishi, Kenichi; Sugou, Shigeo // Applied Physics Letters;11/9/1998, Vol. 73 Issue 19 

    Uncapped InGaAs quantum dots (surface quantum dots) on a GaAs substrate emit photoluminescence at a long wavelength of 1.53 μm at room temperature. When the surface dots are covered by a GaAs cap layer, the emission energy of the dots increases by 287 meV. This large energy shift is mainly...

  • Influence of growth conditions on the photoluminescence of self-assembled InAs/GaAs quantum dots. Chu, L.; Arzberger, M. // Journal of Applied Physics;2/15/1999, Vol. 85 Issue 4, p2355 

    Presents information on a study which investigated the influence of various growth parameters on the optical properties of self-assembled quantum dots. Experimental details; Results and discussion; Conclusion.

  • Photoluminescence of CdSe nanocrystallites embedded in BaTiO[sub 3] matrix. Zhou, Ji; Li, Longtu; Gui, Zhilun; Buddhudu, S.; Zhou, Yan // Applied Physics Letters;3/20/2000, Vol. 76 Issue 12, p1540 

    This letter reports the photoluminescence properties of CdSe quantum dots (QDs) embedded in a ferroelectric BaTiO[sub 3] matrix. The main emission from the samples has been assigned to the band-edge transition of QDs. With an increase in the heat treatment temperature, the emission peak has been...

  • Structural and optical properties of vertically aligned InP quantum dots. Zundel, M.K.; Specht, P. // Applied Physics Letters;11/17/1997, Vol. 71 Issue 20, p2972 

    Examines the influence of stacking of indium phosphide quantum dot layers on the photoluminescence energy, intensity and linewidth. Preparation of the layers by molecular beam epitaxy; Use of transmission electron microscopy; Effect of the reduction of dot layer distance on material homogeneity.

  • Spatially direct and indirect transitions observed for Si/Ge quantum dots. Larsson, M.; Elfving, A.; Holtz, P. O.; Hansson, G. V.; Ni, W.-X. // Applied Physics Letters;6/30/2003, Vol. 82 Issue 26, p4785 

    The optical properties of Ge quantum dots embedded in Si were investigated by means of photoluminescence, with temperature and excitation power density as variable parameters. Two different types of recombination processes related to the Ge quantum dots were observed. A transfer from the...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics