High resolution-high energy x-ray photoelectron spectroscopy using third-generation synchrotron radiation source, and its application to Si-high k insulator systems

Kobayashi, K.; Yabashi, M.; Takata, Y.; Tokushima, T.; Shin, S.; Tamasaku, K.; Miwa, D.; Ishikawa, T.; Nohira, H.; Hattori, T.; Sugita, Y.; Nakatsuka, O.; Sakai, A.; Zaima, S.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p1005
Academic Journal
High-resolution x-ray photoelectron spectroscopy (XPS) at 6 keV photon energy has been realized utilizing high-flux-density x rays from the third generation high-energy synchrotron radiation facility, SPring-8. The method has been applied to analysis of high-k HfO[SUB2] /interlayer/Si)complementary metal-oxide-semiconductor gate-dielectric structures. With the high energy resolution and high throughput of our system, chemical-state differences were observed in the Si 1s, Hf 3d, and O 1s peaks for as-deposited and annealed samples. The results revealed that a SiO[SUBx]N[SUBy] interlayer is more effective in controlling the interface structure than SiO[SUB2]. Our results show the wide applicability of high resolution XPS with hard x rays from a synchrotron source.


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