Fabrication and photoresponse of a pn-heterojunction diode composed of transparent oxide semiconductors, p-NiO and n-ZnO

Ohta, Hiromichi; Hirano, Masahiro; Nakahara, Ken; Maruta, Hideaki; Tanabe, Tetsuhiro; Kamiya, Masao; Kamiya, Toshio; Hosono, Hideo
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p1029
Academic Journal
Transparent trilayered oxide films of ZnO/NiO/indium tin oxide were heteroepitaxially grown on a YSZ (111) substrate by pulsed-laser deposition combined with a solid-phase-epitaxy technique, and were processed to fabricate a p-NiO/n-ZnO diode. The diode exhibited a clear rectifying I - V characteristic with an ideality factor of ∼2 and a forward threshold voltage of ∼1 V. Although the photoresponsivity was fairly weak at the zero-bias voltage, it was enhanced up to ∼0.3 A W[SUP-1] through the application of a reverse bias of -6 V under the irradiation of 360 nm light, a value comparable to that of commercial devices.


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