Publisher’s Note: “Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy” [Appl. Phys. Lett. 82, 4247 (2003)]

Bratland, K. A.; Foo, Y. L.; Desjardins, P.; Greene, J. E.
August 2003
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p1056
Academic Journal
Correction Notice
Presents an errata related to an article 'Sn-enhanced epitaxial thickness during low-temperature Ge(100) molecular-beam epitaxy,' by K.A. Bratland, Y.L. Foo, P. Desjardins and J.E. Greene published in August 4, 2003 issue of the journal 'Applied Physics Letters.' Information about correction of online versions of the article.


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