TITLE

Publisher’s Note: “Sn-enhanced epitaxial thickness during low-temperature Ge(001) molecular-beam epitaxy” [Appl. Phys. Lett. 82, 4247 (2003)]

AUTHOR(S)
Bratland, K. A.; Foo, Y. L.; Desjardins, P.; Greene, J. E.
PUB. DATE
August 2003
SOURCE
Applied Physics Letters;8/4/2003, Vol. 83 Issue 5, p1056
SOURCE TYPE
Academic Journal
DOC. TYPE
Correction Notice
ABSTRACT
Presents an errata related to an article 'Sn-enhanced epitaxial thickness during low-temperature Ge(100) molecular-beam epitaxy,' by K.A. Bratland, Y.L. Foo, P. Desjardins and J.E. Greene published in August 4, 2003 issue of the journal 'Applied Physics Letters.' Information about correction of online versions of the article.
ACCESSION #
10404878

 

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