TITLE

Silicon Nitride Overlays Deposited on Optical Fibers with RF PECVD Method for Sensing Applications: Overlay Uniformity Aspects

AUTHOR(S)
MICHALAK, B.; KOBA, M.; ŚMIETANA, M.
PUB. DATE
June 2015
SOURCE
Acta Physica Polonica, A.;Jun2015, Vol. 127 Issue 6, p1587
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work discusses uniformity of overlays deposited with radio frequency plasma enhanced chemical vapor deposition method on a core of partly uncoated multimode polymer-clad silica optical fiber. Although the method provides uniform films on flat surfaces, uniformity of deposition on optical fibers suspended in plasma is questionable. In this work we investigate optical-fiber-based structures coated with high-refractive-index (nD > 2.3) silicon nitride (SiNx) where lossy mode resonance phenomenon appears. Experimental studies, where the fiber is rotated by 90° and 180°, are compared to those where the sample has not been rotated between the depositions. Deposition process time for all samples has been adjusted in order to obtain the same thickness of overlays on all the fibers. The experimental data has been supported by numerical simulations. The experiment has shown that the rotation modifies transmission of the SiNx-coated fiber structure, as well as its response to external refractive index. As an effect of rotation we observed shift of the resonance appearing at about λ =600 nm towards shorter wavelengths and reduction in amount of the resonances. However, the resonances appearing in transmission spectrum for sample with no rotation show the highest refractive index sensitivity reaching about 690 nm per refractive index unit.
ACCESSION #
103451292

 

Related Articles

  • Modeling of the refractive index and composition of luminescent nanometric chlorinated-silicon nitride films with embedded Si-quantum dots. Rodríguez-Gómez, A.; Escobar-Alarcón, L.; Serna, R.; Cabello, F.; Haro-Poniatowski, E.; García-Valenzuela, A.; Alonso, J. C. // Journal of Applied Physics;2016, Vol. 120 Issue 14, p1 

    The refractive index of nanometric (<100 nm) chlorinated-silicon nitride films with embedded silicon quantum dots, prepared by remote plasma enhanced chemical vapor deposition was investigated by spectroscopic ellipsometry. The complex refractive indexes and thicknesses of the films were...

  • Integration of fiber-coupled high-Q SiNx microdisks with atom chips. Barclay, Paul E.; Srinivasan, Kartik; Painter, Oskar; Lev, Benjamin; Mabuchi, Hideo // Applied Physics Letters;9/25/2006, Vol. 89 Issue 13, p131108 

    Micron scale silicon nitride (SiNx) microdisk optical resonators are demonstrated with Q=3.6×106 and an effective mode volume of 15(λ/n)3 at near-visible wavelengths. A hydrofluoric acid wet etch provides sensitive tuning of the microdisk resonances, and robust mounting of a fiber taper...

  • Investigation of the Fiber Central Dip Refractive Index Profile Using Laser-Lens Fiber Interferometer. El-Ghandoor, Hatem; El-Hennawi, Hatem; El-Diasty, Fouad; Soliman, Mona A. // Journal of Materials Science & Engineering B;2011, Vol. 1 Issue B, p148 

    In this paper, a new technique has been applied to study the central dip refractive index in optical fibers. Laser lens-fiber interference method is used for calculating the refractive index of graded-index optical fiber (GRIN) from its transverse interference pattern. The transverse...

  • Relationship between refractive index and density of synthetic silica glasses. Kitamura, N.; Fukumi, K.; Nishii, J.; Ohno, N. // Journal of Applied Physics;6/15/2007, Vol. 101 Issue 12, p123533 

    The effect of impurity and density on refractive index was studied for silica glasses synthesized with direct, sol-gel, and vapor phase axial deposition (VAD) processes. Linear relationships between the refractive index and density n=Cρ+D were found in a wide wavelength region from...

  • Ag nanocrystal-incorporated germano-silicate optical fiber with high resonant nonlinearity. Lin, Aoxiang; Liu, Xueming; Watekar, Pramod R.; Chung, Youngjoo; Han, Won-Taek // Applied Physics Letters;7/14/2008, Vol. 93 Issue 2, p021901 

    Silver nanocrystal-incorporated germano-silicate optical fiber was fabricated by modified chemical vapor deposition and solution doping techniques. By measuring the wavelength shift of the fringes obtained from the long-period fiber grating pair, upon pumping with an argon-ion laser at 499 nm,...

  • Optical properties of silicon nitride films deposited by hot filament chemical vapor deposition. Deshpande, Sadanand V.; Gulari, Erdogan; Brown, Steven W.; Rand, Stephen C. // Journal of Applied Physics;6/15/1995, Vol. 77 Issue 12, p6534 

    Presents a study which examined the optical properties of silicon nitride films deposited by hot filament chemical vapor deposition. Experimental techniques; Results; Discussion.

  • Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures. Sato, Hidekazu; Izumi, Akira; Matsumura, Hideki // Applied Physics Letters;10/23/2000, Vol. 77 Issue 17 

    The feasibility of using ultrathin silicon nitride (SiN[sub x]) films, prepared by catalytic chemical vapor deposition (Cat-CVD) method, as an ultrathin gate dielectric is reported. The effects of postdeposition treatments carried out using hydrogen (H[sub 2])-decomposed species or NH[sub...

  • Oxidation of silicon nitride films in an oxygen plasma. Kennedy, G.P.; Buiu, O. // Journal of Applied Physics;3/15/1999, Vol. 85 Issue 6, p3319 

    Focuses on the use of plasma anodization of low-pressure chemical vapor deposition (LPCVD) silicon nitride films to produce silicon oxynitride films which are characterized structurally and electrically. Structural properties of plasma anodization; Bulk electrical properties; Interface...

  • Film stress-related vacancy supersaturation in silicon under low-pressure chemical vapor deposited silicon nitride films. Ahn, S. T.; Kennel, H. W.; Plummer, J. D.; Tiller, W. A. // Journal of Applied Physics;11/15/1988, Vol. 64 Issue 10, p4914 

    Focuses on a study which investigated the effects of stress in silicon nitride films, deposited by the low-pressure chemical vapor deposition process, on the point defect concentrations in silicon. Correlation between the magnitude of stress and reactant gases; Effect of nitride thickness;...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics