TITLE

Bipolar cascade lasers at emitting wavelengths near 2 μm

AUTHOR(S)
Yang, Rui Q.; Qiu, Yueming
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p599
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Broad-area InGaAs/InP-based bipolar cascade lasers were demonstrated at emitting wavelengths near 2 µm and their spectral characteristics were investigated. These broad-area lasers operated at temperatures up to 205 K in continuous wave mode and up to room temperature in pulsed mode. Distinct spectral features were observed at high temperatures with larger currents and bias, which may result from significant Stark effects and increased excited state transitions.
ACCESSION #
10331118

 

Related Articles

  • Temperature effect on the lasing from a dye-doped two-dimensional hexagonal photonic crystal made of holographic polymer-dispersed liquid crystals. Luo, D.; Sun, X. W.; Dai, H. T.; Demir, H. V.; Yang, H. Z.; Ji, W. // Journal of Applied Physics;Jul2010, Vol. 108 Issue 1, p013106 

    Temperature dependent lasing was demonstrated in a dye-doped two-dimensional hexagonal photonic crystal made of holographic polymer-dispersed liquid crystals (LCs) along ΓM direction in TE polarization. A redshift in lasing peaks was observed as the temperature increased from 25 to 45 °C....

  • High-field transport transient of minority carriers in p-GaAs. Alencar, A.M.; Nobre, F.A.S.; Sampaio, A.J.C.; Freire, V.N.; da Costa, J. Alzamir P. // Applied Physics Letters;7/29/1991, Vol. 59 Issue 5, p558 

    Calculates the time evolution of minority electron velocity and temperature in p-GaAs for high-electric fields and doping concentrations. Reduction of the overshoot effect through electron-hole interaction; Prediction of high-electric fields of the minority electron velocity overshoot.

  • Defect clustering in silicon emitter junctions. Andersson, Gert I.; Engström, Olof // Journal of Applied Physics;12/15/1990, Vol. 68 Issue 12, p6434 

    Investigates the defect clustering in silicon emitter junctions. Problems related to high doping in semiconductor devices; Charge carrier emission in regions with a high electric field; Details on the experiment.

  • Self-Formed Ti-Rich Barrier Layers in Cu(Ti)/Low-k Samples. Ito, Kazuhiro; Kohama, Kazuyuki; Mori, Kenichi; Maekawa, Kazuyoshi; Murakami, Masanori // AIP Conference Proceedings;6/18/2009, Vol. 1143 Issue 1, p118 

    Thin Ti-rich diffusion barrier layers were found to be formed at the interface between Cu(Ti) films and SiO2/Si substrates after annealing at elevated temperatures. This technique was called “self-formation of the diffusion barrier,” which is attractive for fabrication of ultra-large...

  • Numerical results for the Ar and CF4 mixture gas in a dual frequency capacitively coupled plasma using a hybrid model. Zhen-Hua Bi; Zhong-Ling Dai; Xiang Xu; Zhi-Cheng Li; You-Nian Wang // Physics of Plasmas;Apr2009, Vol. 16 Issue 4, p043510 

    A one dimensional hybrid model has been proposed to study the Ar and CF4 mixture gas in a dual-frequency (DF) capacitively coupled plasma. To achieve the more precise spatiotemporal distributions of the electric field and ions flux, the ion momentum equations are adopted instead of the...

  • Controlling and measuring a single donor electron in silicon. Brown, K. R.; Sun, L.; Bryce, B.; Kane, B. E. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1437 

    We present measurements of single electron transistors, on various substrates, and in the presence of strong electric fields, showing clear differences between doped and undoped samples. We also present evidence of charge motion between resonant charge states. These measurements are relevant to...

  • Electric Field Induced Charge Noise in Doped Silicon: Ionisation of Phosphorus Dopants. Ferguson, A. J.; Chan, V.; Hamilton, A. R.; Clark, R. G. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1449 

    We present measurements of aluminum single electron transistors fabricated on two silicon substrates of different doping densities. On the lower doped substrate (n=1014cm-3) the usual coulomb blockade behaviour is seen. However in the case of the more highly doped material (n=1017cm-3) a change...

  • Spin injection and diffusion in silicon based devices from a space charge layer. Ghosh, Joydeep; Sverdlov, Viktor; Windbacher, Thomas; Selberherr, Siegfried // Journal of Applied Physics;2014, Vol. 115 Issue 17, p17C503-1 

    We have performed simulations on electron spin transport in an n-doped silicon bar with spin-dependent conductivity with or without the presence of an external electric field. We further consider three cases like charge neutrality, charge accumulation, and charge depletion at one boundary and...

  • Atomic magnetic moments and spin notion. Oudet, Xavier // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p5416 

    Presents a study which determined the core notion of spin motion. Discussion of the hypothesis of an electron as a fluid mass made of grains as the electric field and the photon; Association of an energy to spin motion; Conclusion.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics