TITLE

Transmission electron microscopy observation of high-temperature γ-FeSi[sub 2] precipitates formed in Si by iron implantation using a metal vapor vacuum arc ion source

AUTHOR(S)
Gao, Y.; Wong, S. P.; Cheung, W. Y.; Shao, G.; Homewood, K. P.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p638
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This work reports the observation of high-temperature Ï’-FeSi&sub2; precipitates of tens of nanometers indiameter embedded in silicon formed by iron implantation using a metal vapor vacuum arc ion source followed by a dual step annealing process. It was found that the implantation temperature and annealing conditions played important roles on the shape and phase formation of the (FeSi)2 precipitates. When the implantation temperature was high (about 380 ?C), only Î’-FeSi&sub2; precipitateswere formed. When the implantation temperature was low ~about 2100 ?C), after the dual step annealing, in addition to Î’-FeSi&sub2;,)Ï’-FeSi&sub2; precipitates coherent with the silicon substrate were formed.
ACCESSION #
10331104

 

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