Sputter deposited GaN doped erbium thin films: Photoluminescence and 1550 nm infrared electroluminescence

Kim, Joo Han; Shepherd, Nigel; Davidson, Mark; Holloway, Paul H.
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p641
Academic Journal
Erbium doped gallium nitride (GaN) thin films were deposited on Si substrates by reactive rf magnetron cosputtering of a commercial GaN target, together with a metallic erbium target. Nitrogen was employed as the reactive sputtering gas. The gallium nitride doped erbium (GaN:Er) films thus obtained, exhibited the characteristic 525, 540, 660, and 1550 nm photoluminescence emission associated with the Er&sup=3;ion 4 f— 4 f intraband transitions. In addition, 1550 nm IR electroluminescence (EL) emission was observed from the sputter deposited GaN:Er phosphor films. The EL device was an inverted half-stack ac thin-film EL device structure. The 1550 nm EL emission is consistent with impact excitation and subsequent [sup4]I[sub&frac132;→([sup4]I[sub&frac152; radiative relaxation ofEr&sup+3;ions. Impact excitation requires conduction electrons with sufficient energy from electrical field acceleration, to excite the transition.


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