Defect reduction in (1120) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy

Haskell, B. A.; Wu, F.; Craven, M. D.; Matsuda, S.; Fini, P. T.; Fujii, T.; Fujito, K.; DenBaars, S. P.; Speck, J. S.; Nakamura, Shuji
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p644
Academic Journal
This letter reports on the reduction in extended-defect densities in a-plane (112‾0) GaN films achieved via lateral epitaxial overgrowth (LEO) by hydride vapor phase-epitaxy. A variety of dielectric mask patterns was used to produce 8–125-µm-thick, fully coalesced nonpolar GaN films. The nanometer-scale pit densities in the overgrown regions were less than 3×10[sup6]cm&sup-2)compared to ∼10[sup10])cmcm&sup-2) in the direct-growth a-plane GaN. Cathodoluminescence revealed a fourfold increase in luminous intensity in the overgrown material compared to the window material. X-ray rocking curves indicate the films were free of wing tilt within the sensitivity of the measurements. Whereas non-LEO a-plane GaN exhibits basal plane stacking fault and threading dislocation densities of 10[sup5]cm&sup-2; and 10[sup9)cmcm&sup-2;, respectively, the overgrown LEO material was essentially free of extended defects. The basal plane stacking fault and threading dislocation densities in the wing regions were below the detection limits of ∼5×10[sup6]cmcm&sup-2;and 37times;10cm³cmcm&sup-2;, respectively.


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