TITLE

Structural and optical characterization of nonpolar GaN/AlN quantum wells

AUTHOR(S)
Ng, H. M.; Bell, A.; Ponce, F. A.; Chu, S. N. G.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p653
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
We have grown nonpolar GaN/AlN multiple quantum wells by plasma-assisted molecular-beam epitaxy on R-plane sapphire substrates. X-ray diffraction and selected-area diffraction data show that the III-nitride epilayers are oriented in the [11 2 ‾0] direction with the [0001] axis lying in the plane of the substrate. The 18-? GaN quantum wells exhibit luminescence at 326 nm, which is in agreement with the transition energy calculated using a flat-band model; that is, without the presence of a built-in electric field.
ACCESSION #
10331099

 

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