Formation of B[sub i]O[sub i], B[sub i]C[sub s], and B[sub i]B[sub s]H[sub i] defects in e-irradiated or ion-implanted silicon containing boron

Adey, J.; Jones, R.; Briddon, P. R.
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p665
Academic Journal
The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at Ec−0.23, E[subv]+0.29, and E[subv] +0.51 eV are assigned to B[subi]O[subi], B[subi]C[subs], and B[subi]B[subs]H[subi] respectively. B[subi]C[subs] is passivated by one H atom.Evidence for the existence of B[subi]C[subs] has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C.


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