TITLE

Formation of B[sub i]O[sub i], B[sub i]C[sub s], and B[sub i]B[sub s]H[sub i] defects in e-irradiated or ion-implanted silicon containing boron

AUTHOR(S)
Adey, J.; Jones, R.; Briddon, P. R.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p665
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The local density functional theory is used to study the electrical levels and thermal stabilities of complexes of interstitial boron with O and C and a boron dimer with H. The energy levels of these defects are compared with those found from deep level transient capacitance spectroscopy experiments on irradiated p-Si containing B. The levels observed at Ec−0.23, E[subv]+0.29, and E[subv] +0.51 eV are assigned to B[subi]O[subi], B[subi]C[subs], and B[subi]B[subs]H[subi] respectively. B[subi]C[subs] is passivated by one H atom.Evidence for the existence of B[subi]C[subs] has implications for mechanisms involved in the suppression of transient-enhanced diffusion of boron in ion-implanted Si by C.
ACCESSION #
10331095

 

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