TITLE

Sensitivity of amorphous silicon-germanium solar cells to oxygen impurity atoms

AUTHOR(S)
Ganguly, G.; Carlson, D. E.
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p683
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The performance of thin-film solar cells based on amorphous silicon germanium alloys (a-SiGe:H) are shown to be relatively sensitive to the contamination level of oxygen and/or nitrogen impurity atoms. Both a-SiGe single-junction solar cells and amorphous silicon (a-Si:H)/a-SiGe:H tandem solar cells were fabricated using a calibrated leak during deposition of individual layers. After light soaking, the tandem cells with a-SiGe layers deposited with an air leak, and observed to incorporate ∼4(2.3)×10[sup19]cm&su[p-3;)oxygen (nitrogen) atoms, have significantly (10%) lower performance. The efficiency of a-SiGe:H single junction cells fabricated with varying air leak rates are found to improve systematically by ∼20% as the incorporated oxygen (nitrogen) concentration decreased by a factor of ∼3 (23) down to 1.3 (0.1)×10{sup19]cm&sup-3;.
ACCESSION #
10331089

 

Related Articles

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics