Spatially resolved electron energy-loss spectroscopy of an interfacial structure at a Ti thin film Cu interconnect

Ikarashi, Nobuyuki; Ueki, Makoto; Hiroi, Masayuki
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p686
Academic Journal
We previously showed that a Ti layer insertion suppressed the stress-induced void formation in the Cu line under a via without increasing the electric resistance of the line [Ueki et al., Tech. Dig.-Int. Electron Devices Meet. 2002, 749 (2002)]. We describe here a detailed analysis of the interfacial structure between the Ti layer and the lower Cu line, and show that a very thin (about 10 nm) Cu–Ti alloy layer was formed at the interface. We thus infer that the Ti–Cu alloy formation played an important role in suppressing the voiding in the Cu line, while the electronic resistance should hardly be changed because the alloy layer was very thin.


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