Dynamical analysis of carrier concentration in inelastic resonant tunneling

Chan, K. S.
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p692
Academic Journal
An analytic expression for the buildup process in inelastic resonant tunneling is obtained using a tight-binding Hamiltonian. The buildup process is described by the summation of a number of oscillation terms which are guided by an exponential buildup envelope. The relative importance of these terms depends on the incident energy and resonant lifetime. Interesting interference patterns can be obtained by varying these parameters. A nonexponential buildup process is found near the resonant peak, with a buildup rate faster than that of the exponential envelope. Electron–phonon interaction can extend this nonexponential behavior to a wider range of energy by opening up additional resonance channels.


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