Observation of the transition of coherent/sequential electron tunneling in a resonant tunneling regime of a GaAs/AlAs three-terminal quantum-well heterostructure

Kim, Gyungock; Roh, Dong Wan; Paek, Seung Won
July 2003
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p695
Academic Journal
We observe the coherency of electron tunneling preserved up to the resonant peak voltage by measuring scattered electrons in a GaAlAs/GaAs three-terminal heterostructure. The abrupt increase of the scattered electron current, which onsets at the resonant peak voltage, indicates the breakdown of the coherency of electron tunneling. The experimental result indicates that the abrupt nature of the electron scattering in the resonant tunneling regime can be utilized in switching and logical devices.


Related Articles

  • Role of thin multiquantum wells in controlling intrinsic interface quality in molecular beam epitaxially grown heterostructures. Singh, Jasprit; Bajaj, K. K. // Applied Physics Letters;9/15/1985, Vol. 47 Issue 6, p594 

    A model based on Monte Carlo simulations and theory of statistical fluctuations is presented for molecular beam epitaxy growth of III-V semiconductors. It is shown that under normally employed growth conditions, cation surface migration controls the surface (interface) quality. The surface of a...

  • Blue-green ZnSe lasers with a new type of active region. Ivanov, S. V.; Toropov, A. A.; Sorokin, S. V.; Shubina, T. V.; Sedova, I. V.; Kop’ev, P. S.; Alferov, Zh. I.; Waag, A.; Lugauer, H. J.; Reuscher, G.; Keim, M.; Fischer, F. F.; Landwehr, G. // Semiconductors;Sep99, Vol. 33 Issue 9, p1016 

    We report the results of an experimental study of molecular-beam epitaxy of ZnSe-based laser heterostructures with a new structure of the active region, which contains a fractionalmonolayer CdSe recombination region in an expanded ZnSe quantum well and a waveguide based on a variably-strained,...

  • Stimulated emission from a CdTe/HgCdTe separate confinement heterostructure grown by molecular beam epitaxy. Mahavadi, K. K.; Bleuse, J.; Sivananthan, S.; Faurie, J. P. // Applied Physics Letters;5/21/1990, Vol. 56 Issue 21, p2077 

    We present the results of low-temperature photoluminescence and stimulated emission experiments performed on a CdTe/Hg0.45Cd0.55Te/Hg0.67Cd0.33Te multiquantum well separate confinement heterostructure grown by molecular beam epitaxy. The photoluminescence results suggest that because of the...

  • Periodic index separate confinement heterostructure InGaAs/AlGaAs quantum well lasers grown by.... Hong, M.; Chen, Y.K. // Applied Physics Letters;7/6/1992, Vol. 61 Issue 1, p43 

    Analyzes the periodic index separate confinement heterostructures (PINSCH) of quantum well lasers grown by temperature modulation molecular beam epitaxy (MBE). Characteristics of the PINSCH lasers; Use of substrate temperature modulation MBE; Approaches used for the growth of the periodic index...

  • Low-threshold 1.3-mum wavelength, InGaAsP strained-layer multiple quantum well lasers grown by.... Guang-Jye Shiau; Chih-Ping Chao // Applied Physics Letters;8/15/1994, Vol. 65 Issue 7, p892 

    Describes the growth of low-threshold 1.3-micrometer wavelength strained-layer indium gallium arsenic phosphide heterostructure quantum well lasers. Application of gas source molecular beam epitaxy; Value of the lowest threshold current density; Use of silicon-doped (100) indium phosphide...

  • The effect of a “Coulomb well” on the absorption and magnetoabsorption spectra of strained InGaAs/GaAs heterostructures. Kavokin, A. V.; Kokhanovskiı, S. I.; Nesvizhkiı, A. I.; Sasin, M. É.; Seısyan, R. P.; Ustinov, V. M.; Egorov, A. Yu.; Zhukov, A. E.; Gupalov, S. V. // Semiconductors;Sep97, Vol. 31 Issue 9, p950 

    The optical and magnetooptical properties of strained InGaAs/GaAs quantum-well heterostructures grown by molecular-beam epitaxy were studied at T=1.7 K in magnetic fields B≤7.5 T. The well-resolved oscillatory structure of the magnetoabsorption spectra makes it possible to reproduce the...

  • Reflectivity of GaSb-AlSb quantum-well structures in the range 2–5 eV. Ance, C.; Raisin, C.; Ferraton, J. P. // Journal of Applied Physics;10/1/1989, Vol. 66 Issue 7, p3088 

    Presents a study which detailed the reflectance spectra of two GaSb-AlSb quantum-well structures in the range of 2-5 eV at different temperatures. Description of the function of molecular-beam epitaxy; Reference to the GaSb-AlSb structure; Use of the confinement effects in the type-II...

  • Fabrication and optical properties of Si/CaF2(111) multi-quantum wells. Bassani, F.; Vervoort, L.; Mihalcescu, I.; Vial, J. C.; d’Avitaya, F. Arnaud // Journal of Applied Physics;4/15/1996, Vol. 79 Issue 8, p4066 

    Provides information on a study which synthesized, by molecular beam epitaxy, silicon calcium fluoride[sub2](111) multi-quantum wells which are photoluminiscent at room temperature after aging in air. Structural properties of the heterostructures; Photoluminescence spectra; Discussion of the...

  • The Power Density Giving Rise to Optical Degradation of Mirrors in InGaAs/AlGaAs/GaAs-Based Laser Diodes. Kotel�nikov, E. Yu.; Katsnel�son, A. A.; Kudryashov, I. V.; Rastegaeva, M. G.; Richter, W.; Evtikhiev, V. P.; Tarasov, I. S.; Alferov, Zh. I. // Semiconductors;Nov2000, Vol. 34 Issue 11, p1341 

    The InGaAs/AlGaAs/GaAs double laser heterostructures of separate confinement with a quantum well were formed by molecular-beam epitaxy. The study of characteristics of laser diodes with a wide contact (100 �m) showed that the power corresponding to the catastrophic degradation of mirrors...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics