TITLE

Negative differential resistance effects of trench-type InGaAs quantum-wire field-effect transistors with 50-nm gate-length

AUTHOR(S)
Jang, Kee-Youn; Sugaya, Takeyoshi; Hahn, Cheol-Koo; Ogura, Mutsuo; Komori, Kazuhiro; Shinoda, Akito; Yonei, Kenji
PUB. DATE
July 2003
SOURCE
Applied Physics Letters;7/28/2003, Vol. 83 Issue 4, p701
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The effects of negative differential resistance (NDR) have been clearly observed in 50-nm-gate InGaAs/InAlAs trench-type quantum-wire (QWR) field-effect transistors (FETs), which are fabricated by atomic hydrogen-assisted molecular-beam epitaxy. The NDR onset voltage is as low as 0.1 V, and the highest peak-to-valley current ratio is 6.2 at 40 K. The equilateral symmetry of the NDR effect in a QWR FET is also observed. The pronounced NDR effects in a trench-type QWR FET are advantageous for high-speed and low power-consumption devices.
ACCESSION #
10331083

 

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